![]() Use as a durable substrate for matched pairs comparing the AFM vs TEM image. "robust") substrate for doing "matched pairs" of the same identical area first by TEM and then by SEM. Used as an inert substrate at elevated temperatures to observe dynamically, reactions in situ by either TEM or SEM in some instances, by AFM. ![]() Some Suggested Applications for SPI Silicon Nitride Membrane Windows: General information about the electrical resistivity values for these membrane window products can be found here. Except for those with membranes 20 nm in thickness all of the SPI silicon nitride are of the low stress variety. These membranes have a Si:N ratio greater than 3:4, that is, Si is greater than 3. With technology advances and additional experience, we have developed the technology to produce "low stress" (LS) silicon nitride membranes. However, stoichiometric or "ST" membranes had a relatively high residual intrinsic stress which contributed to a less robust film, one that is easily ruptured. Our original technology produced "stoichiometric" Si3N4 and for the first year or so we offered this particular product line. This has been an area of some confusion and our goal here is to clarify the precise nature of the SPI membrane window grids. The "Up" side of the grid is the membrane side, not the etched side.ĭetails of The Nitride Membrane Material: (ST VS LS Membranes) The membrane side is completely smooth, the back side has the etch pit in it. The product is meant for a single use and we would not recommend trying to clean off old samples for reuse. While the membranes are very thin and fragile, they are sufficiently "robust" to permit one to conduct their experiments. The next step is to back etch through the silicon wafer to the silicon nitride layer, which produces the "membrane window" effect. Presently, we have seven different thicknesses of the nitride, 200, 150, 100, 75, 50, 30, and 20 nm. These unique membranes of silicon nitride (Si3N4) were made using a highly innovative approach using electronics grade orientation silicon wafers with a a thin film of Si3N4 deposited to the desired thickness. ![]() ![]() 200 µm Thick Frames (Window Size: 0.5 mm) ![]()
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